Staff Engineer, Adv DRAM PI
On-siteBoise, Idaho, United States
EXPIREDBoise, Idaho, United StatesOn-siteFull TimeSenior LevelMasters DegreeEnterprise
Full TimeSenior LevelMasters DegreeEnterprise
Job Summary
Lead development of Advanced DRAM device technologies including charge storage devices and thin-film transistors by designing and running experiments in the R&D fab to optimize process flows and integration. Analyze inline, parametric, and probe data to identify variability, noise, and failure mechanisms while applying AI-assisted tools to accelerate root-cause determination. Collaborate with cross-functional teams to resolve performance and yield challenges, turning data into actionable insights for breakthroughs in performance, manufacturability, and reliability.
Required Qualifications
- MS in Physics, Materials Science, Electrical Engineering, or related field
- 3+ years of semiconductor industry experience
- Strong understanding of semiconductor process integration and device physics
- Experience with experimental design, data analysis, and statistical methods
- Demonstrated ability to lead projects and work across technical teams
Desired Qualifications
- PhD in Physics, Materials Science, Electrical Engineering, or related field
- Experience with DRAM, NAND, or other memory technologies
- Experience using AI-assisted analytics to enhance data interpretation, anomaly detection, and yield improvement initiatives
- Strong background in materials science applied to semiconductor processing
- Familiarity with emerging or alternative memory technologies
- 3 years of demonstrated ability in R&D or advanced technology development environments
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