Sr. Chief Engineer I, R&D
On-siteTaipei, Taiwan, Taiwan or Kaohsiung, Takao, Taiwan
Job Summary
Develop new SiC Power MOSFET Planar/Trench products through design of experiments to meet design targets. Support detailed reliability and failure analysis during new product development. Benchmark device performance against competitors and work with the global SiC MOSFET team to plan and execute product activities. Solve new product quality issues to meet automotive and industrial qualification standards. Requires a Master's degree in Engineering, Physics, or Materials Science with minimum five years of R&D experience, preferably in semiconductors, and familiarity with wafer Fab processes or SiC Diode/MOS processes. Located in New Taipei City, Taiwan.
Required Qualifications
- Master's degree or above in Engineering/Physic/Material
- Minimum 5 years of experience in R&D jobs
- preferably from semiconductor industry
- Familiar with wafer Fab process or SiC Diode/MOS process
- Familiar with Device Reliability failure analysis
- Good English speaking ability
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