Senior Engineer, Research Science Engineering
On-siteBengaluru, Karnataka, India
Job Summary
Develop compact models for LDMOS, CMOS, BJT, diode, resistor, and capacitor devices, with specific focus on high-voltage LDMOS and CMOS. Characterize and model inter-device parasitics involving bipolar transistor action and multi-physics disciplines including electrical, thermal, and mechanical factors. Perform long-term device degradation modeling for MOS and LDMOS structures while exploring instrument limitations through hands-on electrical measurements. This role supports the ADI global modeling team in Bangalore, India, working on advanced process development for applications in autonomous vehicles, drones, and remote healthcare.
Required Qualifications
- PhD in Electrical Engineering or Applied Physics
- strong device physics background
- Expertise in high-voltage LDMOS and CMOS modeling
- expertise in inter-device cross-coupling modeling through parasitic bipolar action in monolithic silicon
- excels at device physics
- hands-on experience with electrical measurements
- Minimum Qualifications: PhD in Electrical Engineering or Applied Physics with a strong device physics background
- Experienced device modeling expert with PhD in Electrical Engineering or Applied Physics and with strong physical intuition of electrothermal, piezoelectric, and bipolar device action
- Strong knowledge of Python programming
- Familiar with SPICE-like circuit simulator
- Required Travel: Yes, 10% of the time
- Shift Type: 1st Shift/Days
Desired Qualifications
- Preferred Qualifications: Experienced device modeling expert with PhD in Electrical Engineering or Applied Physics and with strong physical intuition of electrothermal, piezoelectric, and bipolar device action
- Strong knowledge of Python programming
- Familiar with SPICE-like circuit simulator
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