Principal Image Sensor Development Engineer
$133,520–$200,000 year
On-sitePrinceton, New Jersey, United States or Rochester, New York, United States
Job Summary
Define pixel architecture, layout/design, and process integration schemes for Low Light CMOS and Space Qualified Sensors. Design pixel test structures, generate process experiments for optimization, and manage foundry-level fabrication of CMOS and CCD image sensors. Perform simulations of advanced sensors and collaborate with mixed signal and digital design teams to develop next-generation imaging architectures. Lead new product introduction projects and support technical proposals for government and commercial customers. Develop externally and internally funded research programs while aligning imager technology with the product roadmap.
Required Qualifications
- Bachelors or Masters in Optics, Physics, Electrical Engineering or a related field
- 15+ years' experience in CMOS image sensor design (Defense, Commercial)
- US Citizenship
- ability to obtain/maintain a security clearance
- Proficiency with Cadence Design Systems IC design tools (layout, LVS, DRC, Schematic) in CMOS/CCD image sensor
- Proficiency on TCAD process simulation tools or optics/optoelectronics
- Ability to understand as well as create circuit layouts and schematics and run DRC and LVS
- Ability to travel up to 10% of the time if necessary
Desired Qualifications
- PhD
- In depth knowledge and process integration experience in the state-of-art CMOS/CCD image senor is preferred. (i.e. Backside illuminated Senor, Global shutter, 3d Wafer stacking)
- Knowledge on how to build topological and electrical design rules understanding limitations of fab tools is plus
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