Principal Image Sensor Development Engineer
$133,520–$200,000 year
On-sitePrinceton, New Jersey, United States or Rochester, New York, United States
Job Summary
Define pixel architecture, layout/design, and process integration schemes for CMOS and CCD image sensors. Design test structures for validation, generate process experiments to optimize imager performance, and manage foundry-level fabrication. Conduct simulations of advanced sensors and collaborate with mixed signal teams to develop next-generation imaging architectures. Lead new product introduction projects and support technical proposals to win externally and internally funded research programs. Work independently and with cross-functional engineers to optimize design and production while supporting the technology roadmap for commercial, government, and military markets.
Required Qualifications
- Bachelors or Masters in Optics, Physics, Electrical Engineering or a related field
- 15+ years' experience in CMOS image sensor design (Defense, Commercial)
- US Citizenship
- ability to obtain/maintain a security clearance
- Proficiency with Cadence Design Systems IC design tools (layout, LVS, DRC, Schematic) in CMOS/CCD image sensor
- Proficiency on TCAD process simulation tools or optics/optoelectronics
- Ability to understand as well as create circuit layouts and schematics and run DRC and LVS
- Ability to travel up to 10% of the time if necessary
Desired Qualifications
- PhD
- In depth knowledge and process integration experience in the state-of-art CMOS/CCD image senor is preferred (i.e. Backside illuminated Senor, Global shutter, 3d Wafer stacking)
- Knowledge on how to build topological and electrical design rules understanding limitations of fab tools is plus
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