Principal Engineer, Reliability Engineering

Drive GaN intrinsic reliability strategy across 100V–650V technologies, ensuring alignment with product roadmaps. Define and execute reliability qualification methodologies, including HTGB, HTRB, switching, and transient stress testing. Lead physics-of-failure investigations to identify degradation mechanisms and drive root-cause resolution. Develop and validate lifetime and reliability models for GaN devices while developing test infrastructure for ATE-based and custom stress systems. Provide technical leadership on reliability risks, guardbands, and design recommendations to de-risk product development. Define next-generation reliability methodologies for WBG technologies including SiC and AlGaN.