Memory Circuit Design Engineer
$190,610–$269,100 year
Hybrid · Austin, Texas, United States
Job Summary
Memory Circuit Design Engineer needed to design, develop, and build full-custom and compiler-based SRAMs, large-signal arrays, ROMs, custom memories, digital circuits, and caches for Intel CPUs and SoCs. Collaborate with domain experts to drive memory innovations and high-performance, high-density, low-power embedded memory designs on advanced CMOS processes. Responsibilities include memory circuit design and characterization, simulations, cache design and critical path analysis, memory path-finding for PPA optimization, memory array/IP and periphery IC design, methodology definition, and delivering memory technology collaterals. Qualifications include 8+ years with a Bachelor's (or 6+ with a Master's or 4+ with a PhD) in a STEM field, 3+ years in CMOS design and SRAM/Cache design; preferred experience in low-power techniques, memory design trade-offs, and familiarity with EBB tools and signal integrity. The role offers a hybrid on-site/off-site work model in Austin, TX.
Required Qualifications
- Bachelor's degree with 8+ years of experience; or master's degree with 6+ years of experience; or PhD with 4+ years of experience in Electrical Engineering, Computer Engineering, Computer Science or a STEM-related field
- 3+ years of experience in CMOS circuit design, digital logic optimizations, and circuit trade-offs for power, performance, and area
- 3+ years of expertise in SRAM and Cache design
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